? 2014 ixys corporation, all rights reserved IXYA8N90C3D1 ixyp8n90c3d1 v ces = 900v i c110 = 8a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.0v t fi(typ) = 130ns ds100400c(12/14) high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 950 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 60 ? a t j = 125 ? c 400 a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 8a, v ge = 15v, note 1 2.15 3.00 v t j = 125 ? c 2.60 v symbol test conditions maximum ratings v ces t j = 25c to 175c 900 v v cgr t j = 25c to 175c, r ge = 1m ? 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 20 a i c110 t c = 110c 8 a i f110 t c = 110c 12 a i cm t c = 25c, 1ms 48 a i a t c = 25c 4 a e as t c = 25c 15 mj ssoa v ge = 15v, t vj = 150c, r g = 30 ? i cm = 16 a (rbsoa) clamped inductive load @v ce ? v ces p c t c = 25c 125 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. weight to-263 2.5 g to-220 3.0 g features ? optimized for low switching losses ? square rbsoa ? positive thermal coefficient of vce(sat) ? anti-parallel ultra fast diode ? avalanche rated ? international standard packages advantages ? high power density ? low gate drive requirement applications ? high frequency power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts 900v xpt tm igbt genx3 tm w/ diode g = gate c = collector e = emitter tab = collector to-263 aa (ixya) g c e to-220ab (ixyp) g e c (tab) c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXYA8N90C3D1 ixyp8n90c3d1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 8a, v ce = 10v, note 1 2.9 4.8 s c ie s 400 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 30 pf c res 7.8 pf q g(on) 13.3 nc q ge i c = 8a, v ge = 15v, v ce = 0.5 ? v ces 3.4 nc q gc 5.8 nc t d(on) 16 ns t ri 20 ns e on 0.46 mj t d(off) 40 ns t fi 130 ns e of f 0.18 0.50 mj t d(on) 17 ns t ri 22 ns e on 1.00 mj t d(off) 75 ns t fi 163 ns e off 0.22 mj r thjc 1.2 c/w r thcs to-220 0.50 c/w inductive load, t j = 25c i c = 8a, v ge = 15v v ce = 0.5 ? v ces , r g = 30 ? note 2 inductive load, t j = 125c i c = 8a, v ge = 15v v ce = 0.5 ? v ces , r g = 30 ? note 2 reverse diode (fred) (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 3.0 v t j = 150c 2.0 v i rm 7.5 a t rr 114 ns r thjc 2.5 c/w i f = 10a,v ge = 0v, -di f /dt = 200a/ s, t j = 100c v r = 600v t j = 100c i f = 10a,v ge = 0v, note 1 dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 to-263 outline 1. gate 2. collector 3. emitter 4. collector bottom side pins: 1 - gate 2 - collector 3 - emitter to-220 outline
? 2014 ixys corporation, all rights reserved IXYA8N90C3D1 ixyp8n90c3d1 fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 00.5 11.522.5 33.5 v ce - volts i c - amperes v ge = 15v 13v 12v 8v 10v 7v 9v 11v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 12v 9v 13v 10v 7v 11v 8v fig. 3. output characteristics @ t j = 150oc 0 2 4 6 8 10 12 14 16 00.511.522.533.544.5 v ce - volts i c - amperes 9v 8v 7v 6v 10v v ge = 15v 13v 12v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 8a i c = 4a i c = 16a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 16a t j = 25oc 8a 4a fig. 6. input admittance 0 2 4 6 8 10 12 14 16 18 20 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYA8N90C3D1 ixyp8n90c3d1 fig. 11. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance aaaa 3 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10121416182022 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 2 4 6 8 10 12 14 16 18 200 300 400 500 600 700 800 900 v ce - volts i c - amperes t j = 150oc r g = 30 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 02468101214 q g - nanocoulombs v ge - volts v ce = 450v i c = 8a i g = 10ma fig. 9. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2014 ixys corporation, all rights reserved IXYA8N90C3D1 ixyp8n90c3d1 fig. 12. inductive switching energy loss vs. gate resistance 0.1 0.2 0.3 0.4 0.5 0.6 30 60 90 120 150 180 210 240 270 300 r g - ohms e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 450v i c = 8a i c = 16a fig. 15. inductive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 30 60 90 120 150 180 210 240 270 300 r g - ohms t f i - nanoseconds 0 40 80 120 160 200 240 280 t d(off) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 450v i c = 16a i c = 8a fig. 13. inductive switching energy loss vs. collector current 0.10 0.15 0.20 0.25 0.30 0.35 0.40 8 9 10 11 12 13 14 15 16 i c - amperes e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 e on - millijoules e off e on - - - - r g = 30 ? ????? v ge = 15v v ce = 450v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.10 0.15 0.20 0.25 0.30 0.35 0.40 25 50 75 100 125 t j - degrees centigrade e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 e on - millijoules e off e on - - - - r g = 30 ? ???? v ge = 15v v ce = 450v i c = 8a i c = 16a fig. 16. inductiv e turn-off switching times v s. collector current 40 60 80 100 120 140 160 180 200 8 9 10 11 12 13 14 15 16 i c - amperes t f i - nanoseconds 20 30 40 50 60 70 80 90 100 t d(off) - nanoseconds t f i t d(off) - - - - r g = 30 ? ? , v ge = 15v v ce = 450v t j = 125oc t j = 25oc fig. 17. inductiv e turn-off switching times v s. junction temperature 40 60 80 100 120 140 160 180 200 220 25 50 75 100 125 t j - degrees centigrade t f i - nanoseconds 20 30 40 50 60 70 80 90 100 110 t d(off) - nanoseconds t f i t d(off) - - - - r g = 30 ? ? , v ge = 15v v ce = 450v i c = 8a i c = 16a
ixys reserves the right to change limits, test conditions, and dimensions. IXYA8N90C3D1 ixyp8n90c3d1 ixys ref: ixy_8n90c3(1d) 10-20-11 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 8 9 10 11 12 13 14 15 16 i c - amperes t r i - nanoseconds 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 t d(on) - nanoseconds t r i t d(on) - - - - r g = 30 ? ? , v ge = 15v v ce = 450v t j = 25oc t j = 125oc fig. 20. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 25 50 75 100 125 t j - degrees centigrade t r i - nanoseconds 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 t d(on) - nanoseconds t r i t d(on) - - - - r g = 30 ? ? , v ge = 15v v ce = 450v i c = 16a i c = 8a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 30 60 90 120 150 180 210 240 270 300 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 t d(on) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 450v i c = 8a i c = 16a
? 2014 ixys corporation, all rights reserved fig. 21. forward current i f vs v f fig. 23. fig. 22. fig. 26. fig. 25. fig. 24. fig. 27. transient thermal resistance junction to case IXYA8N90C3D1 ixyp8n90c3d1
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